Design and Modelling of Materials Based Memristors Designs in Flexible Electronics from Synapse to Systems and Applications

T. Vasudeva Reddy, K. Madhava Rao, V Sreelatha Reddy, N. Swapna, Arunkumar Madupu, M S S Bhargav

2025

Abstract

Memristors, or memory resistors, have garnered significant attention in recent years due to their potential to revolutionize computing, memory storage, and analog circuit design. This review article provides a comprehensive overview of the research progress and developments in Memristor designs, spanning from fundamental concepts to cutting-edge applications. We discuss the evolution of Memristor architectures, from initial titanium dioxide- based devices to advanced spintronic, ferroelectric, and phase- change materials-based designs. Notable advancements in Memristor modelling, simulation, and fabrication techniques are highlighted, alongside significant breakthroughs in scalability, reliability, and performance. The article explores various applications of memristors, including on-volatile memory (NVM) technologies the challenges and future directions for Memristor research, improved device uniformity, and the integration of memristors with emerging technologies such as grapheme, 2D materials, and quantum computing.

Paper Citation

in Harvard Style

Reddy T., Madhava Rao K., Sreelatha Reddy V., Swapna N., Madupu A. and Bhargav M. (2025). Design and Modelling of Materials Based Memristors Designs in Flexible Electronics from Synapse to Systems and Applications. In Proceedings of the 3rd International Conference on Futuristic Technology - Volume 2: INCOFT; ISBN 978-989-758-763-4, SciTePress, pages 844-851. DOI: 10.5220/0013605900004664

in Bibtex Style

@conference{incoft25,
author={T. Vasudeva Reddy and K. Madhava Rao and V Sreelatha Reddy and N. Swapna and Arunkumar Madupu and M S S Bhargav},
title={Design and Modelling of Materials Based Memristors Designs in Flexible Electronics from Synapse to Systems and Applications},
booktitle={Proceedings of the 3rd International Conference on Futuristic Technology - Volume 2: INCOFT},
year={2025},
pages={844-851},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0013605900004664},
isbn={978-989-758-763-4},
}

in EndNote Style

TY - CONF

JO - Proceedings of the 3rd International Conference on Futuristic Technology - Volume 2: INCOFT
TI - Design and Modelling of Materials Based Memristors Designs in Flexible Electronics from Synapse to Systems and Applications
SN - 978-989-758-763-4
AU - Reddy T.
AU - Madhava Rao K.
AU - Sreelatha Reddy V.
AU - Swapna N.
AU - Madupu A.
AU - Bhargav M.
PY - 2025
SP - 844
EP - 851
DO - 10.5220/0013605900004664
PB - SciTePress