Progress and Prospects of Topological Materials in Photodetection

Yunna Duan

Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong, China

Keywords: Topological Materials, Photodetection, Photoelectric Conversion.

Abstract: Topological materials exhibit unique electronic properties, making them promising for photodetection. This

paper presents a comprehensive review of the emerging applications of topological materials in

photodetection, focusing on their exceptional electronic properties that enable superior device performance.

The article briefly explains the transport mechanisms of topological insulators, topological semimetals,

topological superconductors, as well as new types of topological materials such as chiral topological materials

and ferroelectric topological materials.The article also systematically examines recent breakthroughs

demonstrating how these materials achieve remarkable photodetection capabilities through enhanced

responsivity, improved detectivity, and ultrafast response times. The paper discusses promising

implementation scenarios across multiple technological domains, particularly in high-speed optical

communications, advanced infrared imaging systems, and next-generation quantum devices. Although

challenges persist in material synthesis and device integration, topological photodetectors represent a

transformative advancement in optoelectronics, offering unprecedented combinations of broadband

sensitivity, rapid response, and robust performance that could redefine detection technologies across scientific

and industrial applications.

1 INTRODUCTION

Photodetectors have significant applications in

various fields such as optical communication,

imaging, security monitoring, and biosensing (Liang

et al., 2018). Research indicates that topological

materials can detect in the range from infrared to

terahertz waves, breaking through the limitations of

traditional detection materials. They also possess high

responsivity, response time, and a high signal-to-

noise ratio. These properties can be further enhanced

through structural designs such as doping, nanowires,

and heterojunctions, as well as using strain and other

control methods. Moreover, with the increasing

discovery of topological materials and the continuous

progress in their preparation techniques, the

application of topological materials in photoelectric

detection will have greater potential.

This article aims to systematically explore the

unique advantages, performance regulation methods,

device design strategies, and application potential of

topological materials in the field of photoelectric

detection, providing a research foundation for the

https://orcid.org/0009-0004-6641-7404

development of a new generation of high-

performance photoelectric detectors.

2 OVERVIEW OF

TOPOLOGICAL MATERIALS

Topological materials exhibit unique electronic

properties due to their special surface states. They are

mainly classified into four types as topological

insulator (TI), topological crystalline insulator (TCI),

topological semimetal (TSM), and topological

superconductor (TSC).

TIs are bulk insulating but with conductive

surface states protected by time reversal symmetry,

enabling high carrier mobility.

TCIs have surface states protected by crystal

symmetries such as mirror symmetry, as seen in

SnTe. They show insulating bulk and conductive

edges, suitable for photodetection.

TSMs feature bulk band crossing (Dirac/Weyl

points) near the Fermi level, leading to high carrier

concentration and mobility. Examples include TaAs

Duan, Y.

Progress and Prospects of Topological Materials in Photodetection.

DOI: 10.5220/0013827500004708

Paper published under CC license (CC BY-NC-ND 4.0)

In Proceedings of the 2nd International Conference on Innovations in Applied Mathematics, Physics, and Astronomy (IAMPA 2025), pages 457-463

ISBN: 978-989-758-774-0

457

(Weyl) and Na₃Bi (Dirac), ideal for low-power, high-

sensitivity photodetectors.

TSCs host Majorana zero-energy modes on

surfaces, with robust, defect-resistant conduction

channels. Their combination of superconductivity

and topological protection is valuable for energy-

efficient devices.

Moreover, some materials cannot be classified

within the traditional topological phase framework.

These are referred to as new topological phases,

including topological chiral crystals and ferroelectric

topological materials.

Topological chiral crystals lack mirror symmetry

in their lattice structure and display topological

behaviors even without symmetry protection. In some

cases, they resemble topological semimetals,

especially when band crossing points (such as Dirac

or Weyl points) appear near the Fermi surface,

offering potential for broad-spectrum photodetection.

Topological ferroelectric materials share features

of both topological insulators and superconductors,

making them highly promising for photoelectric

detection applications.

3 PHOTODETECTOR:

PRINCIPLES,

MANUFACTURING PROCESS,

AND STRUCTURES

3.1 Principle

Topological materials demonstrate exceptional

photodetection properties owing to their unique band

structures, such as surface states and linear

dispersion, enabling strong light absorption,

particularly in the IR and THz regions. Their high

carrier mobility and low scattering rates facilitate

rapid charge transport with minimal recombination

losses, while topological protection further enhances

carrier stability. Moreover, the surface states

significantly enhance photocurrent generation, even

under low-energy excitation, thereby improving both

sensitivity and response speed in photodetectors.

In addition to these mechanisms, studies have

shown that doping with magnetic elements can break

the time-reversal symmetry of the surface states in

topological insulators, thereby inducing a band gap in

these states. Consequently, the band gap of

topological insulator surface states can be effectively

controlled through the introduction of magnetic

impurities

(Swatek et al., 2020). Studies have also

demonstrated that strain can influence the optical

absorption of topological insulator films by altering

crystal symmetry or modulating the band gap of

surface states. Such strain-induced regulation, rather

than changes in film thickness, enables precise

control at the device level, facilitating efficient

photoelectric detection across a broad photon energy

range. Furthermore, this approach can enhance the

previously reported anisotropic photoelectric current

response, offering new opportunities for the

development of advanced photodetectors (Brems et

al., 2018).

3.2 Manufacturing Process and

Structures

Preparation of transport devices using topological

materials primarily involves two methods: thin film

growth and heterostructure construction. Thin film

growth utilizes molecular beam epitaxy (MBE) for

high-quality single-crystal films with precise doping

control. Chemical vapor deposition (CVD) produces

large-area 2D materials but requires a transfer step.

Electrochemical deposition and radio frequency

magnetron sputtering directly grow films on

substrates, avoiding interface contamination. The

hydrothermal method is cost-effective for multi-

dimensional heterojunctions.

Heterostructure construction relies on van der

Waals stacking, where interfaces are formed without

chemical bonds via mechanical transfer, and vertical

epitaxial growth for direct contact. In situ insertion of

passivation layers optimizes Schottky junction

performance.

Device design focuses on performance. Back-to-

back heterojunctions suppress dark current through

dual interfaces, improving the signal-to-noise ratio.

Self-powered p-n junctions operate at zero bias using

built-in electric fields. Schottky junctions combine

passivation layers to enhance response speed (160 ns)

and band coverage (up to 10.6 μm). Photochemical

cells separate charge carriers via a solid-liquid

interface electric field without external bias. Special

structures like plasma antenna coupling enhance

terahertz absorption, while topological lasers enable

room-temperature lasing, and topological photonic

crystal modulators support ultra-high-speed signal

transmission.

Material preparation is shifting from traditional

mechanical exfoliation to in-situ growth methods to

reduce interface defects and improve process

compatibility. Device design is embracing multi-

dimensional heterojunctions and self-powered

structures, with a clear trend toward functional

integration. Future challenges include achieving

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large-scale uniform growth techniques, precise

control of interface states and defects, and deep

integration with existing semiconductor processes

(CMOS, photonic integrated circuits).

4 RESEARCH PROGRESS IN

RECENT YEARS

4.1 The Application of Topological

Insulators in Photodetection

In the field of topological insulators, Wang et al.

(2023) combined transition metal dichalcogenide

(MoS₂) with a topological insulator (Sb₂Te₃) to create

a self-powered broadband photodetector, addressing

the severe recombination issue at the interface of

traditional 2D material heterojunctions. The device

demonstrated record-low dark current (2.4 pA) and

high responsivity (>150 mA/W) in the 500-900 nm

wavelength range, offering a new solution for low-

power optoelectronic integration (Figure 1).

Figure 1: Electrical characterization of Sb2Te3/MoS2 PN junction heterostructure photodetector (Wang et al., 2013)

In the same year, Zhao et al. innovatively

proposed a 1D p-Te/2D n-Bi₂Te₃ multidimensional

heterojunction structure, fabricated via a

hydrothermal method. The device achieved a high on-

off ratio (377.45) and excellent stability (only an

18.08% decay over 30 days) in the 365-850 nm

wavelength range, filling the technological gap for

low-cost, high-performance self-driven

photodetectors (Figure 2) (Zhao et al., 2023).

Figure 2: SEM images of Bi2Te3 NSs with different magnifications (Zhao et al., 2023)

In 2024, Ye et al. pioneered the direct

electrodeposition of Bi₂Se₃ films on ITO, avoiding

interface contamination caused by traditional transfer

methods. The resulting photoelectrochemical

detector achieved a photocurrent density of 2.87

μA/cm², with significantly improved stability (88%

retention after one week), opening a new path for

large-scale fabrication of topological insulator films

(Ye et al., 2024). In the same year, the Maurya team

first combined TIBiSe₂ with GaN to construct a

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vertical heterojunction diode, achieving high-

responsivity detection in the ultraviolet to near-

infrared (300-900nm) wavelength range. The device

exhibited a rectification ratio of 160, overcoming the

limitations of traditional broadband detectors that rely

on complex band engineering

(Figure 3) (Maurya et

al., 2024).

Figure 3: The preparation process of Bi2Se3 film (Ye et al., 2024)

Recent studies on topological insulators have made

progress in the design optimization of heterostructure,

innovation of fabrication processes, and improvement

of device performance. These related research efforts

have facilitated breakthroughs in wide-spectrum

response, self-powered operation, high sensitivity,

and long-term stability of devices, providing new

solutions and development paths for achieving high-

performance, low-cost, and integrated photodetection

technologies.

4.2 The Application of Topological

Semimetals in Photodetection

In the field of topological semimetals, Zhang et al.

(2022) first designed and fabricated a back-to-back

heterojunction photodetector based on the three-

dimensional Dirac semimetal (Cd₁₋ₓZnₓ)₃As₂. The

dual-heterojunction structure suppressed the dark

current to the picoampere level, achieving a signal-to-

noise ratio as high as 10⁴. This device simultaneously

optimized broadband detection (450 nm–4.5 μm) and

ultrafast response (87.5 μs), offering a new

architecture for infrared focal plane arrays.

Figure 4: Photodetection performance of the (Cd1-xZnx) As2/Sb2Se3 BTB heterojunction (Zhang et al., 2022)

In 2023, the Lin Wang team innovatively utilized

the topological band characteristics of the Dirac

semimetal PtSe₂, combined with a nanoplasmonic

antenna, to achieve high responsivity (0.2 A/W) and

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picosecond-level response in the terahertz (THz)

range (<1.24 meV) at room temperature. This

breakthrough surpassed the performance limits of

traditional semiconductor materials in low-energy

photon detection (Figures 4, 5)(Wang et al., 2022).

Figure 5: Characteristics of the PtSe2 low-energy photon detector (Wang et al., 2022)

In 2024, Li et al. first observed the strong coupling

effect between spin-polarized electrons and phonons

in PtTe₂ using ultrafast spectroscopy, revealing the

microscopic mechanism of anisotropic phonon

dynamics. This study laid the theoretical foundation

for the application of topological materials in ultrafast

optoelectronic devices (Figure 6)

(Li et al., 2024).

Figure 6: Temperature-dependent THz emission and its correlation with carrier compensation (Li et al., 2024)

Topological semimetals have made significant

progress in the field of photoelectric detection,

manifested in aspects such as wide-spectrum high

response, ultrafast response speed, low dark current,

and unique spin-phonon coupling mechanism,

providing new material systems and theoretical

foundations for the development of high-performance

and ultrafast optoelectronic devices.

Progress and Prospects of Topological Materials in Photodetection

461

4.3 The Application of Topological

Superconductors in Photodetection

The Pattanayak team (2024) systematically measured

the optical constants of FeTe₀.₆Se₀.₄ topological

superconducting nanosheets in the 450-1100 nm

range and at 4K-295K. They found that in the

superconducting state (4K), the refractive index

ranged from 2.81 to 4.26, and the extinction

coefficient from 2.24 to 3.21. The material exhibited

dual-Drude multi-band characteristics and anomalous

dispersion, confirming its high extinction coefficient

outperforms traditional copper-based

superconductors, providing key parameters for the

development of quantum photonic devices like high-

temperature superconducting single-photon detectors

(Figure 7)(Pattanayak, Rout, & Jha, 2025).

Figure 7: Pump-modulated MOKE loops in the time

domain (Pattanayak, Rout, & Jha, 2025).

4.4 The Application of Novel

Topological Materials in

Photodetection

Topological handedness crystals (such as RhSi and

CoSi) and ferroelectric topological materials (such as

GeTe and SnTe) demonstrate unique advantages in

photoelectric detection. RhSi and CoSi achieve a

wide-spectrum response through the quantumized

circularly polarized photocurrent effect, and have

high sensitivity and fast response characteristics in

the terahertz to infrared wavelength range. GeTe and

SnTe utilize the synergy of ferroelectricity and

topological surface states, showing controllable high

photocurrent response rate in the mid-infrared

wavelength range. The excellence of these materials

stems from their special Berry curvature and band

structure, providing important candidate systems for

the next generation of high-performance

photoelectric detectors.

Research indicates that the photocurrent response

of CoSi at 0.4 eV photon energy reaches 550 μA/V²,

and the responsivity of SnTe at 635 nm wavelength is

as high as 49.03 A/W, which is significantly superior

to that of traditional semiconductor devices. The

efficient working characteristics of these materials

under zero bias conditions make them have important

application prospects in terahertz sensing and infrared

detection fields

(Shen et al., 2024).

As seen from the above, research on topological

materials has shifted from fundamental property

exploration to device applications. Several

achievements, such as the first realization of

broadband self-powered detection, breakthroughs in

terahertz room-temperature detection limits, and the

discovery of new mechanisms for light-controlled

magnetism, mark the maturity of this field.

5 CONCLUSIONS

Topological materials exhibit unique electronic

properties that make them highly suitable for next-

generation optoelectronic devices. In optical

communication, photodetectors based on topological

materials offer ultrafast response times and

exceptional carrier mobility, enabling high-speed

optical signal detection and transmission for data

centers and 5G/6G networks. In infrared imaging and

sensing, their broad spectral response, from

ultraviolet to terahertz, allows for versatile

applications in night vision, thermal imaging, and

biomedical sensing. Additionally, in quantum

information processing, features such as zero energy

gap and chirality enable the realization of quantum

bits and support technologies like quantum

computing and communication, highlighting their

potential in quantum photonic devices.

This review systematically examined five major

classes—topological insulators, crystalline insulators,

semimetals, superconductors, and novel topological

materials—highlighting their distinct mechanisms for

enhancing photodetector performance. Key

advantages such as ultrafast response, high

sensitivity, and low-energy consumption position

these materials as superior alternatives to

conventional semiconductors.

While significant progress has been made in

understanding these materials and developing device

architectures like heterojunctions, challenges in

large-scale synthesis and device integration remain.

Future efforts should focus on optimizing fabrication

techniques, improving material quality, and exploring

hybrid systems to overcome current limitations. With

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continued research, topological photodetectors could

enable breakthroughs in high-speed optical

communication, infrared imaging, and quantum

information processing. Their unique combination of

robustness and performance promises to drive

innovation in next-generation optoelectronic devices,

paving the way for transformative applications across

scientific and industrial fields.

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