Authors:
Kow-Ming Chang
1
;
Chu-Feng Chen
2
;
Yu-Bin Wang
3
;
Chung-Hsien Liu
3
;
Jiun-Ming Kuo
3
and
Chiung-Hui Lai
4
Affiliations:
1
Institute of Electronics and National Chiao-Tung University; I-Shou University, Taiwan
;
2
Institute of Electronics Engineering and National Chiao-Tung University, Taiwan
;
3
Institute of Electronics and National Chiao-Tung University, Taiwan
;
4
Chung Hua University, Taiwan
Keyword(s):
Silicon nanowire, SiGe, Bio-sensor, 3-amino-propyltrime-thoxy-silane (APTS).
Related
Ontology
Subjects/Areas/Topics:
Biomedical Engineering
;
Biomedical Instruments and Devices
;
Biomedical Sensors
;
Devices
;
Health Monitoring Devices
;
Human-Computer Interaction
;
Microelectronics
;
Nanotechnologies
;
Physiological Computing Systems
Abstract:
Nanowire is widely used in biological sensor because it has the high surface-to-volume ratio. Germanium (Ge) would be beneficial to enhance the sensitivity of silicon nanowire for bio-sensor. In this study, we have successfully fabricated the SiGe on Insulator (SGOI) nanowires with different annealing temperature by side-wall spacer technique, respectively. The 3-amino-propyltrime-thoxy-silane (APTS) is used to modify the surface, which can connect the bio-linker. Nanowire is considered as a resistance, and the change of conductance (G) and sensitivity (S) of different samples corresponding to APTS treatment were investigated. As annealing temperature was elevated from 800 to 950℃, the SiGe nanowire exhibited increasing sensitivity in the chemical detection. However, it was noted that degradation of sensitivity was observed as the annealing temperature increases up to 1000℃. This behavior may be associated with the reduction of the Ge concentration at the surface of SiGe nanowire du
e to high-temperature diffusion of Ge in Si. So, temperature is a key parameter in the annealing process producing two effects: repairs of defects and Ge diffusion. There would be an optimal annealing temperature between 900 and 1000℃.
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