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Authors: Cyril Guedj 1 ; Léonard Jaillet 2 ; François Rousse 2 and Stéphane Redon 2

Affiliations: 1 Univ. Grenoble Alpes, CEA, LETI, DTSI, SCMC, F-38000 Grenoble and France ; 2 Univ. Grenoble Alpes, Inria, CNRS, Grenoble INP*, LJK, 38000 Grenoble and France *Institute of Engineering Univ. Grenoble Alpes

ISBN: 978-989-758-323-0

Keyword(s): Atomistic, Atomic, Modelling, Electron Microscopy, STEM, TEM, Microscopy, Graphene, Defects, Vacancy, Microstructure, Image, Simulation, Materials, Characterization, Brenner, Samson.

Related Ontology Subjects/Areas/Topics: Application Domains ; Computer Simulation Techniques ; Formal Methods ; Industrial Processes ; Laboratory Simulation Software ; Materials ; Simulation and Modeling ; Simulation Tools and Platforms

Abstract: The characterization of advanced materials and devices in the nanometer range requires complex tools, and the data analysis at the atomic level is required to understand the precise links between structure and properties. This paper demonstrates that the atomic-scale modelling of graphene-based defects may be performed efficiently for various structural arrangements using the Brenner module of the SAMSON software platform. The signatures of all kinds of defects are computed in terms of energy and scanning transmission electron microscopy simulated images. The results are in good agreement with all theoretical and experimental data available. This original methodology is an excellent compromise between the speed and the precision required by the semiconductor industry and opens the possibility of realistic in-silico research conjugated to experimental nanocharacterisation of these promising materials.

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Paper citation in several formats:
Guedj, C.; Jaillet, L.; Jaillet, L.; Rousse, F.; Rousse, F.; Redon, S. and Redon, S. (2018). Atomistic Modelling and Simulation of Transmission Electron Microscopy Images: Application to Intrinsic Defects of Graphene.In Proceedings of 8th International Conference on Simulation and Modeling Methodologies, Technologies and Applications - Volume 1: SIMULTECH, ISBN 978-989-758-323-0, pages 15-24. DOI: 10.5220/0006829200150024

@conference{simultech18,
author={Cyril Guedj. and Léonard Jaillet. and Léonard Jaillet. and Fran\c{C}ois Rousse. and Fran\c{C}ois Rousse. and Stéphane Redon. and Stéphane Redon.},
title={Atomistic Modelling and Simulation of Transmission Electron Microscopy Images: Application to Intrinsic Defects of Graphene},
booktitle={Proceedings of 8th International Conference on Simulation and Modeling Methodologies, Technologies and Applications - Volume 1: SIMULTECH,},
year={2018},
pages={15-24},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0006829200150024},
isbn={978-989-758-323-0},
}

TY - CONF

JO - Proceedings of 8th International Conference on Simulation and Modeling Methodologies, Technologies and Applications - Volume 1: SIMULTECH,
TI - Atomistic Modelling and Simulation of Transmission Electron Microscopy Images: Application to Intrinsic Defects of Graphene
SN - 978-989-758-323-0
AU - Guedj, C.
AU - Jaillet, L.
AU - Jaillet, L.
AU - Rousse, F.
AU - Rousse, F.
AU - Redon, S.
AU - Redon, S.
PY - 2018
SP - 15
EP - 24
DO - 10.5220/0006829200150024

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