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Authors: X. LI 1 ; S. Sundaram 2 ; P. Disseix 3 ; S. Bouchoule 4 ; G. Le Gac 3 ; G. Patriarche 4 ; F. Réveret 3 ; J. Leymarie 3 ; Y. El Gmili 2 ; J. Streque 2 ; F. Genty 5 ; J-P. Salvestrini 6 ; P. L. Voss 1 ; R. D. Dupuis 7 and A. Ougazzaden 1

Affiliations: 1 Georgia Institute of Technology and Georgia Tech - CNRS, France ; 2 Georgia Tech - CNRS, France ; 3 Université Blaise Pascal, France ; 4 LPN CNRS and UPR20, France ; 5 Supelec, LMOPS and EA4423, France ; 6 Georgia Tech - CNRS and Université de Lorraine, France ; 7 Georgia Institute of Technology, United States

Keyword(s): VCSEL, DUV, BAlN, MQWs.

Abstract: Vertical cavity surface emitting laser (VCSEL) is one of the most attractive configurations for semiconductor light emitting devices. However, the III-nitride VCSELs based on AlGaInN demonstrated so far operate in the wavelengths of visible violet and blue spectral range, while no efficient VCSELs operating below 300 nm were reported. To extend the VCSEL emission to the ultraviolet region, the challenges lie in many aspects, such as degradation of the structural quality of heteroepitaxial AlGaN materials with increasing Al molar ratio, lack of high quality AlN substrates, strong quantum-confined Stark effect (QCSE) induced by piezoelectric and spontaneous polarization, and decrease of TE polarization emission as the Al composition increases for the deep UV wavelength. Besides, development of high-reflectivity distributive Bragg reflector (DBR) structures with large bandwidth for the UV VCSELs is a big challenge, considering the limited refractive index contrast and large lattice misma tch for conventionally used AlGaN/Al(Ga)N structures. The objective of this work is to develop VCSELs operating below 300 nm. In this framework, the AlGaN MQWs grown on relaxed AlGaN buffer emitting at 280 nm has been studied for the active region, including AlGaN epitaxial growth for the control of composition and strain relaxation, the realization of TE-enhanced MQWs design and the related characterizations. For the DBRs, new BAlGaN material system would be applied with more freedom in bandgap, strain engineering with tailoring of refractive index. The growth conditions of BAlN single layers, BAlN/AlN heterostructure with 11% boron and structural characteristics have been explored. The promising results achieved for both AlGaN MQWs and BAlN materials advance prospects for the development of VCSELs and other light emitting devices in the DUV region. (More)

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Paper citation in several formats:
LI, X.; Sundaram, S.; Disseix, P.; Bouchoule, S.; Le Gac, G.; Patriarche, G.; Réveret, F.; Leymarie, J.; Gmili, Y.; Streque, J.; Genty, F.; Salvestrini, J.; Voss, P.; Dupuis, R. and Ougazzaden, A. (2015). BAlGaN-based Vertical Cavity Surface Emitting Laser Operating in Deep UV Region.In Doctoral Consortium - DCPHOTOPTICS, (PHOTOPTICS 2015) ISBN , pages 26-36

author={X. LI. and S. Sundaram. and P. Disseix. and S. Bouchoule. and G. Le Gac. and G. Patriarche. and F. Réveret. and J. Leymarie. and Y. El Gmili. and J. Streque. and F. Genty. and J{-}P. Salvestrini. and P. L. Voss. and R. D. Dupuis. and A. Ougazzaden.},
title={BAlGaN-based Vertical Cavity Surface Emitting Laser Operating in Deep UV Region},
booktitle={Doctoral Consortium - DCPHOTOPTICS, (PHOTOPTICS 2015)},


JO - Doctoral Consortium - DCPHOTOPTICS, (PHOTOPTICS 2015)
TI - BAlGaN-based Vertical Cavity Surface Emitting Laser Operating in Deep UV Region
SN -
AU - LI, X.
AU - Sundaram, S.
AU - Disseix, P.
AU - Bouchoule, S.
AU - Le Gac, G.
AU - Patriarche, G.
AU - Réveret, F.
AU - Leymarie, J.
AU - Gmili, Y.
AU - Streque, J.
AU - Genty, F.
AU - Salvestrini, J.
AU - Voss, P.
AU - Dupuis, R.
AU - Ougazzaden, A.
PY - 2015
SP - 26
EP - 36
DO -

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