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Authors: YangSub Park ; KilBum Kang ; Sangyun Yun and SeongSoo Kim

Affiliation: Advanced Technology Inc, Korea, Republic of

Keyword(s): BLT, Bond Line Thickness, Si Thickness, TSV.

Related Ontology Subjects/Areas/Topics: Applications ; Computer Vision, Visualization and Computer Graphics ; Image Understanding ; Pattern Recognition

Abstract: Today, many semiconductor products are manufactured through the TSV process. At this time, It is important to manage the Bond Line Thickness because all of the stacked dies must be discarded due to a single contact failure. If we can measure the thickness of the silicon, the BLT in the wafer level package process can be estimated. In this paper, we propose a method to measure the thickness of silicon by using infrared ray. We designed the infrared light source to select the path of the incident light to the objective lens. And this optical system has a characteristic of moving in the opposite direction according to a change in height. By using this optical system, it is possible to calculate the correct in-focus position. By doing this, we present a method to measure BLT by measuring the distance between the top and bottom of Si surface.

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Paper citation in several formats:
Park, Y.; Kang, K.; Yun, S. and Kim, S. (2018). The Method to Measure Si Thickness for Bond Line Thickness. In Proceedings of the 7th International Conference on Pattern Recognition Applications and Methods - ICPRAM; ISBN 978-989-758-276-9; ISSN 2184-4313, SciTePress, pages 273-275. DOI: 10.5220/0006525502730275

@conference{icpram18,
author={YangSub Park. and KilBum Kang. and Sangyun Yun. and SeongSoo Kim.},
title={The Method to Measure Si Thickness for Bond Line Thickness},
booktitle={Proceedings of the 7th International Conference on Pattern Recognition Applications and Methods - ICPRAM},
year={2018},
pages={273-275},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0006525502730275},
isbn={978-989-758-276-9},
issn={2184-4313},
}

TY - CONF

JO - Proceedings of the 7th International Conference on Pattern Recognition Applications and Methods - ICPRAM
TI - The Method to Measure Si Thickness for Bond Line Thickness
SN - 978-989-758-276-9
IS - 2184-4313
AU - Park, Y.
AU - Kang, K.
AU - Yun, S.
AU - Kim, S.
PY - 2018
SP - 273
EP - 275
DO - 10.5220/0006525502730275
PB - SciTePress