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Authors: Sandro Rao ; Giovanni Pangallo and Francesco Della Corte

Affiliation: University "Mediterranea" of Reggio Calabria, Italy

ISBN: 978-989-758-174-8

Keyword(s): p-i-n diode, Temperature Sensor, Amorphous Silicon, Photonic Integrated Circuit.

Abstract: A temperature sensor based on a photonic layer-integrated hydrogenated amorphous silicon p-i-n diode is presented. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in a biasing current range ≈34-40 nA has been measured.

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Paper citation in several formats:
Rao, S.; Pangallo, G. and Della Corte, F. (2016). High Perfomance Integrated Temperature Sensor based on Amorphous Silicon Diode for Photonics on CMOS.In Proceedings of the 4th International Conference on Photonics, Optics and Laser Technology - Volume 1: AOMat, (PHOTOPTICS 2016) ISBN 978-989-758-174-8, pages 369-372. DOI: 10.5220/0005744903690372

@conference{aomat16,
author={Sandro Rao. and Giovanni Pangallo. and Francesco Della Corte.},
title={High Perfomance Integrated Temperature Sensor based on Amorphous Silicon Diode for Photonics on CMOS},
booktitle={Proceedings of the 4th International Conference on Photonics, Optics and Laser Technology - Volume 1: AOMat, (PHOTOPTICS 2016)},
year={2016},
pages={369-372},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0005744903690372},
isbn={978-989-758-174-8},
}

TY - CONF

JO - Proceedings of the 4th International Conference on Photonics, Optics and Laser Technology - Volume 1: AOMat, (PHOTOPTICS 2016)
TI - High Perfomance Integrated Temperature Sensor based on Amorphous Silicon Diode for Photonics on CMOS
SN - 978-989-758-174-8
AU - Rao, S.
AU - Pangallo, G.
AU - Della Corte, F.
PY - 2016
SP - 369
EP - 372
DO - 10.5220/0005744903690372

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