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Authors: Yehya H. Ghallab 1 and Wael Badawy 2

Affiliations: 1 Helwan University; University of Calgary, Canada ; 2 University of Calgary, Canada

ISBN: 978-989-8111- 17-3

ISSN: 2184-4305

Keyword(s): Electric Field Sensor, CMOS technology, Electric Field, Field Effect Transistor, lab-on-a-chip, Integrated sensors.

Related Ontology Subjects/Areas/Topics: Biomedical Engineering ; Biomedical Instruments and Devices ; Biomedical Sensors ; Microelectronics

Abstract: This paper presents the Differential Electric Field Sensitive Field Effect Transistor (DeFET) as a CMOS electric field sensor. The DeFET is based on a standard 0.18-µm Taiwan Semiconductor Manufacturing Company (TSMC) CMOS technology. This paper also presents the DeFET’s DC and AC models. The experimental and simulation results which validate the different models of the DeFET are presented. Moreover, some applications of the DeFET on the biomedical and lab-on-a-chip are presented.

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Paper citation in several formats:
H. Ghallab, Y. and Badawy, W. (2008). DIFFERENTIAL ELECTRIC FIELD SENSITIVE FIELD EFFECT TRANSISTOR - Characteristics, Modeling and Applications. In Proceedings of the First International Conference on Biomedical Electronics and Devices - Volume 2: BIODEVICES, (BIOSTEC 2008) ISBN 978-989-8111- 17-3; ISSN 2184-4305, pages 250-255. DOI: 10.5220/0001046102500255

@conference{biodevices08,
author={Yehya {H. Ghallab}. and Wael Badawy.},
title={DIFFERENTIAL ELECTRIC FIELD SENSITIVE FIELD EFFECT TRANSISTOR - Characteristics, Modeling and Applications},
booktitle={Proceedings of the First International Conference on Biomedical Electronics and Devices - Volume 2: BIODEVICES, (BIOSTEC 2008)},
year={2008},
pages={250-255},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0001046102500255},
isbn={978-989-8111- 17-3},
issn={2184-4305},
}

TY - CONF

JO - Proceedings of the First International Conference on Biomedical Electronics and Devices - Volume 2: BIODEVICES, (BIOSTEC 2008)
TI - DIFFERENTIAL ELECTRIC FIELD SENSITIVE FIELD EFFECT TRANSISTOR - Characteristics, Modeling and Applications
SN - 978-989-8111- 17-3
IS - 2184-4305
AU - H. Ghallab, Y.
AU - Badawy, W.
PY - 2008
SP - 250
EP - 255
DO - 10.5220/0001046102500255

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