Real-time Prognosis of Failure of the IGBT in a Conversion Chain

Kokou Langueh, Ghaleb Hoblos, Houcine Chafouk

Abstract

In this paper, the problem of prognosis of failure of Insulated Gate Bipolar Transistors (IBGT) in a DC-DC converter is studied. Indeed, the degradation of IGBT can be caused by several factors (electrical, thermal and mechanical stresses,aging, ...). This degradation can be assessed in relation to the variation of the internal resistance of the IGBT. Likewise, we determined the remaining useful life (RUL) of the IGBT compared to the variation of its internal resistance and the duty cycle of the IGBT control signal, which are both estimated in this paper.

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