Author:
            
                    Seonghan Ryu
                    
                        
                    
                    
                
        
        
            Affiliation:
            
                    
                        
                    
                    Hannam University, Korea, Republic of
                
        
        
        
        
        
             Keyword(s):
            Wireless Sensors, RF Transceiver, CMOS VCO, Biomedical Frequency Band. 
        
        
            
                Related
                    Ontology
                    Subjects/Areas/Topics:
                
                        Biomedical Engineering
                    ; 
                        Biomedical Instruments and Devices
                    ; 
                        Biomedical Sensors
                    ; 
                        Microelectronics
                    ; 
                        Wireless Systems
                    
            
        
        
            
                Abstract: 
                This paper presents a multiband low phase noise CMOS VCO with wide frequency tunability using switched bondwire inductor bank, for operation in the medical wireless frequency band. The combination of bondwire inductor and CMOS switch transistor enhances frequency tunability and improves phase noise characteristics. All most of the medical wireless frequency bands can be covered by the single VCO proposed in this paper. The proposed multiband VCOs, VCO1 operates from 2.3 GHz to 6.3 GHz with phase noise of -136 and -122 dBc/Hz at 1 MHz offset frequency, respectively, and VCO2 operates from 4.9 GHz to 12.7 GHz with phase noise of -122.3 and -111.8 dBc/Hz at 1 MHz offset frequency, respectively. Switched bondwire inductor bank shows high quality factor Q at each frequency band, which allows better tradeoff between phase noise and power consumption. The proposed VCO1 is designed in TSMC 0.18um CMOS process and consumes 7.2 mW power resulting in figure of merit(FOM) of -189.3 dBc/Hz at 1 M
                Hz offset from 6 GHz carrier frequency, and the proposed VCO2 is designed in SEC 65nm CMOS process and consumes 8 mW power resulting in figure of merit(FOM) of -184.6 dBc/Hz at 1 MHz offset from 12 GHz carrier frequency.
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