A New Method on Response Speed of Uni-traveling-carrier Double Heterojunction Phototransistor: Bilateral Incidence from the Base Region

Liang Chen

2019

Abstract

In this paper, a new method to improve the response speed of an SiGe-based uni-traveling-carrier double heterojunction phototransistor (UTC-DHPT) are illustrated. The detailed analysis show that bilateral incidence from the base region has better performances than one incidence from the base region.

Paper Citation

in Harvard Style

Chen L. (2019). A New Method on Response Speed of Uni-traveling-carrier Double Heterojunction Phototransistor: Bilateral Incidence from the Base Region.In Proceedings of 5th International Conference on Vehicle, Mechanical and Electrical Engineering - Volume 1: ICVMEE, ISBN 978-989-758-412-1, pages 413-415. DOI: 10.5220/0008868604130415

in Bibtex Style

@conference{icvmee19,
author={Liang Chen},
title={A New Method on Response Speed of Uni-traveling-carrier Double Heterojunction Phototransistor: Bilateral Incidence from the Base Region},
booktitle={Proceedings of 5th International Conference on Vehicle, Mechanical and Electrical Engineering - Volume 1: ICVMEE,},
year={2019},
pages={413-415},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0008868604130415},
isbn={978-989-758-412-1},
}

in EndNote Style

TY - CONF

JO - Proceedings of 5th International Conference on Vehicle, Mechanical and Electrical Engineering - Volume 1: ICVMEE,
TI - A New Method on Response Speed of Uni-traveling-carrier Double Heterojunction Phototransistor: Bilateral Incidence from the Base Region
SN - 978-989-758-412-1
AU - Chen L.
PY - 2019
SP - 413
EP - 415
DO - 10.5220/0008868604130415