New Ga-Free InAs/InAsSb Superlattice Infrared Photodetector

J-P. Perez, Q. Durlin, C. Cervera, P. Christol

Abstract

We studied Ga-free InAs/InAsSb type-II superlattice (T2SL) in terms of period, thickness and antimony composition as a photon absorbing active layer (AL) of a suitable XBn structure for full mid-wavelength infrared domain (MWIR, 3-5µm) detection. The SL photodetector structures were fabricated by molecular beam epitaxy (MBE) on n-type GaSb substrate and exhibited cut-off wavelength between 5µm and 5.5µm at 150K. Electro-optical and electrical results of the device are reported and compared to the usual InSb MWIR photodiode.

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Paper Citation


in Harvard Style

Perez J., Durlin Q., Cervera C. and Christol P. (2018). New Ga-Free InAs/InAsSb Superlattice Infrared Photodetector .In Proceedings of the 6th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS, ISBN 978-989-758-286-8, pages 232-237. DOI: 10.5220/0006634002320237


in Bibtex Style

@conference{photoptics18,
author={J-P. Perez and Q. Durlin and C. Cervera and P. Christol},
title={New Ga-Free InAs/InAsSb Superlattice Infrared Photodetector },
booktitle={Proceedings of the 6th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,},
year={2018},
pages={232-237},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0006634002320237},
isbn={978-989-758-286-8},
}


in EndNote Style

TY - CONF

JO - Proceedings of the 6th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,
TI - New Ga-Free InAs/InAsSb Superlattice Infrared Photodetector
SN - 978-989-758-286-8
AU - Perez J.
AU - Durlin Q.
AU - Cervera C.
AU - Christol P.
PY - 2018
SP - 232
EP - 237
DO - 10.5220/0006634002320237