High Perfomance Integrated Temperature Sensor based on Amorphous Silicon Diode for Photonics on CMOS

Sandro Rao, Giovanni Pangallo, Francesco Della Corte

Abstract

A temperature sensor based on a photonic layer-integrated hydrogenated amorphous silicon p-i-n diode is presented. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in a biasing current range ≈34-40 nA has been measured.

References

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Paper Citation


in Harvard Style

Rao S., Pangallo G. and Della Corte F. (2016). High Perfomance Integrated Temperature Sensor based on Amorphous Silicon Diode for Photonics on CMOS . In Proceedings of the 4th International Conference on Photonics, Optics and Laser Technology - Volume 1: AOMat, (PHOTOPTICS 2016) ISBN 978-989-758-174-8, pages 369-372. DOI: 10.5220/0005744903690372


in Bibtex Style

@conference{aomat16,
author={Sandro Rao and Giovanni Pangallo and Francesco Della Corte},
title={High Perfomance Integrated Temperature Sensor based on Amorphous Silicon Diode for Photonics on CMOS},
booktitle={Proceedings of the 4th International Conference on Photonics, Optics and Laser Technology - Volume 1: AOMat, (PHOTOPTICS 2016)},
year={2016},
pages={369-372},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0005744903690372},
isbn={978-989-758-174-8},
}


in EndNote Style

TY - CONF
JO - Proceedings of the 4th International Conference on Photonics, Optics and Laser Technology - Volume 1: AOMat, (PHOTOPTICS 2016)
TI - High Perfomance Integrated Temperature Sensor based on Amorphous Silicon Diode for Photonics on CMOS
SN - 978-989-758-174-8
AU - Rao S.
AU - Pangallo G.
AU - Della Corte F.
PY - 2016
SP - 369
EP - 372
DO - 10.5220/0005744903690372