Authors:
O. Rabinovich
;
S. Didenko
;
S. Legotin
and
M. Basalevskiy
Affiliation:
National University of Science and Technology “MISiS” and P.O. Box 409, Russian Federation
Keyword(s):
AlGaAs, Photodiode, Photodetector, Dark Current, Scintillators.
Related
Ontology
Subjects/Areas/Topics:
Lasers
;
MEMS and Nanophotonics
;
Mobile Software and Services
;
Optical Materials
;
Optics
;
Photodetectors, Sensors and Imaging
;
Photonic and Optoelectronic Materials and Devices
;
Photonics
;
Photonics, Optics and Laser Technology
;
Photorefractive Effects, Materials, and Devices
;
Semiconductor Lasers and Leds
;
Telecommunications
;
Ultrafast Electronics, Photonics and Optoelectronics
;
Wireless Information Networks and Systems
Abstract:
AlGaAs/GaAs photodetectors operate at room temperature in the visible spectrum. Distinctive features of
the photodetectors are: high absolute spectral sensitivity up to 0.112 A / W at λmax = 530-570 nm;
photodiodes showed the low dark current of 4.7 nA and 530 nA, accordantly, at 5 V reverse bias. The shift
of the spectral characteristics which is associated with an increase in the band gap was detected.