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Author: Josef Blazej

Affiliation: Czech Technical University, Czech Republic

ISBN: 978-989-758-174-8

Keyword(s): Solid State Single Photon Detector, Gallium, Compound Semiconductors, Avalanche Photodiode (APD).

Related Ontology Subjects/Areas/Topics: Photodetectors, Sensors and Imaging ; Photonic and Optoelectronic Materials and Devices ; Photonics ; Photonics, Optics and Laser Technology ; Ultrafast Electronics, Photonics and Optoelectronics

Abstract: The experimental results acquired on avalanche photodiodes based on III-V semiconductor materials and operated as single photon counters with picosecond timing resolution are reported. The semiconductor structures fabricated on the basis of GaAs, GaP and GaAsP have been operated in a Geiger mode and employed in a photon counting experiment at the wavelengths from near ultraviolet to near infrared. The dark count rates, photon counting sensitivity and timing resolution have been measured for the experimental diode samples.

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Paper citation in several formats:
Blazej J. (2016). New Materials for Photon Counting Avalanche Photodiodes.In Proceedings of the 4th International Conference on Photonics, Optics and Laser TechnologyISBN 978-989-758-174-8, pages 236-240. DOI: 10.5220/0005656802360240

@conference{photoptics16,
author={Josef Blazej},
title={New Materials for Photon Counting Avalanche Photodiodes},
booktitle={Proceedings of the 4th International Conference on Photonics, Optics and Laser Technology},
year={2016},
pages={236-240},
doi={10.5220/0005656802360240},
isbn={978-989-758-174-8},
}

TY - CONF

JO - Proceedings of the 4th International Conference on Photonics, Optics and Laser Technology
TI - New Materials for Photon Counting Avalanche Photodiodes
SN - 978-989-758-174-8
AU - Blazej J.
PY - 2016
SP - 236
EP - 240
DO - 10.5220/0005656802360240

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